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Semiconductor Components Industries, LLC, 2007
March, 2007 ? Rev. 3
1
Publication Order Number:
MBD101/D
MBD101, MMBD101LT1
Preferred Device
Schottky Barrier Diodes
Designed primarily for UHF mixer applications but suitable also for
use in detector and ultra?fast switching circuits. Supplied in an
inexpensive plastic package for low?cost, high?volume consumer
requirements. Also available in Surface Mount package.
Features
?
Low Noise Figure ? 6.0 dB Typ @ 1.0 GHz
?
Very Low Capacitance ? Less Than 1.0 pF
?
High Forward Conductance ? 0.5 V (Typ) @ IF
= 10 mA
?
Pb?Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
7.0
V
Forward Power Dissipation
TA
= 25
°C MBD101
MMBD101LT1
Derate above 25°C MBD101
MMBD101LT1
PF
280
225
2.2
1.8
mW
mW/°C
Junction Temperature
TJ
+150
°C
Storage Temperature Range
Tstg
?55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR
= 10
A)
V(BR)R
7.0
10
?
V
Diode Capacitance
(VR
= 0, f = 1.0 MHz,
Note 1, page 2)
CD
?
0.88
1.0
pF
Forward Voltage
(IF
= 10 mA)
VF
?
0.5
0.6
V
Reverse Leakage
(VR
= 3.0 V)
IR
?
0.02
0.25
A
http://onsemi.com
SOT?23 (TO?236)
CASE 318
STYLE 8
Preferred
devices are recommended choices for future use
and best overall value.
1
2
3
Device Package Shipping?
ORDERING INFORMATION
MBD101 TO?92 5000 Units / Box
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MBD101G TO?92
(Pb?Free)
5000 Units / Box
MMBD101LT1 SOT?23 3000 / Tape & Reel
MMBD101LT1G SOT?23
(Pb?Free)
3000 / Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
4M M
A = Assembly Location
Y = Year
WW = Work Week
4M = Device Code (SOT?23)
M = Date Code*
= Pb?Free Package
(Note: Microdot may be in either location)
MARKING
DIAGRAMS
3
CATHODE
1
ANODE
2
CATHODE
1
ANODE
(Pin 2 Not Connected)
TO?92 2?Lead
CASE 182
STYLE 1
1
2
SILICON SCHOTTKY
BARRIER DIODES
MBD
101
AYWW
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